Title :
Study of gain in determining T0 of 1.3 μm semiconductor lasers
Author :
Ackerman, D.A. ; Morton, P.A. ; Kazarinov, R.E. ; Hybertsen, M.S. ; Shtengel, G.E. ; Tanbun-Ek, T. ; Logan, R.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Extensive measurements on 1.3 μm semiconductor lasers show the dominant role of gain in threshold temperature dependence. Material gain is decomposed into two components using chemical potential in order to isolate deviation of theoretical predictions from experimental results
Keywords :
carrier density; carrier lifetime; chemical potential; infrared sources; laser theory; quantum well lasers; semiconductor device models; 1.3 mum; chemical potential; semiconductor laser gain; threshold temperature dependence; Charge carrier density; Chemical lasers; Gain measurement; Laser theory; Optical materials; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519352
