Title :
Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics
Author :
Saran, Mukul ; Cox, Ron ; Martin, Charlie ; Ryan, Greg ; Kudoh, T. ; Kanasugi, M. ; Hortaleza, Jed ; Ibnabdeljalil, M. Hamed ; Murtuza, Masood ; Capistrano, Don ; Roderos, Rodel ; Macaraeg, Richard
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
March 31 1998-April 2 1998
Abstract :
A new bond failure mechanism related to the new, mechanically weak, low-k dielectrics in intermetal dielectric stacks is presented. Mechanical reinforcement of the dielectric stack through the use of metal grids is demonstrated to be effective to prevent this damage. Possible failure mechanisms are discussed.
Keywords :
dielectric thin films; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; lead bonding; mechanical strength; permittivity; bond failure mechanism; bond-pad damage elimination; dielectric stack; failure mechanisms; intermetal dielectric stacks; intermetal dielectrics; mechanical reinforcement; mechanically weak low-k dielectrics; metal grid reinforcement; structural reinforcement; Aluminum; Bonding forces; Delamination; Dielectrics; Failure analysis; Instruments; Robustness; Testing; Tin; Wafer bonding;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670555
