Title :
In-situ monitoring of bond degradation in power ICs under high current stress
Author :
Krabbenborg, Benno
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
fDate :
March 31 1998-April 2 1998
Abstract :
Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.
Keywords :
aluminium; failure analysis; gold; integrated circuit design; integrated circuit packaging; integrated circuit reliability; lead bonding; power integrated circuits; 2.5 A; Al; Al bond pads; Al-Au; Au bond balls; bond degradation; current stress; degradation kinetics; failure mechanisms; high current bond pad design rules; high current stress; in-situ monitoring; lifetime; low-current lifetime; negative current stress; positive current stress; power ICs; Bonding; Degradation; Fuses; Gold; Monitoring; Power dissipation; Power integrated circuits; Stress; Temperature; Wire;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670557
