• DocumentCode
    2813622
  • Title

    In-situ monitoring of bond degradation in power ICs under high current stress

  • Author

    Krabbenborg, Benno

  • Author_Institution
    Philips Semicond., Nijmegen, Netherlands
  • fYear
    1998
  • fDate
    March 31 1998-April 2 1998
  • Firstpage
    238
  • Lastpage
    247
  • Abstract
    Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.
  • Keywords
    aluminium; failure analysis; gold; integrated circuit design; integrated circuit packaging; integrated circuit reliability; lead bonding; power integrated circuits; 2.5 A; Al; Al bond pads; Al-Au; Au bond balls; bond degradation; current stress; degradation kinetics; failure mechanisms; high current bond pad design rules; high current stress; in-situ monitoring; lifetime; low-current lifetime; negative current stress; positive current stress; power ICs; Bonding; Degradation; Fuses; Gold; Monitoring; Power dissipation; Power integrated circuits; Stress; Temperature; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
  • Conference_Location
    Reno, NV, USA
  • Print_ISBN
    0-7803-4400-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.1998.670557
  • Filename
    670557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2813622