DocumentCode
2813708
Title
Liquid Phase Electroepitaxial (LPEE) Growth and Photoluminescence Characterization of Undoped GaInAsSb (2.25μm) at 530°C
Author
Simpson, Darrell L. ; Iyer, Shanthi ; Abul-Fadl, Ali
Author_Institution
North Carolina A&T State University, Department of Electrical Engineering
fYear
1992
fDate
1-3 Mar 1992
Firstpage
525
Lastpage
526
Keywords
Epitaxial growth; Excitons; Infrared detectors; Lattices; Molecular beam epitaxial growth; Performance evaluation; Photoluminescence; Photonic band gap; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
System Theory, 1992. Proceedings. SSST/CSA 92. The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design
ISSN
0094-2898
Print_ISBN
0-8186-2665-8
Type
conf
DOI
10.1109/SSST.1992.712352
Filename
712352
Link To Document