Title :
The quantum Hall effect and the ohm
Author :
Hartland, A. ; Jones, R.G. ; Legg, D.J.
Author_Institution :
Div. of Electr. Sci., NPL, Teddington, UK
Abstract :
The authors discuss the development of resistance standards based on the quantum Hall effect. The first measurements had a fractional uncertainty >5×10-6, but subsequent experiments in the major national standards laboratories have refined the measurements in different semiconducting materials, particularly the gallium arsenide-aluminium gallium arsenide heterostructure, to such an extent that reproducibilities of 5×10-9 are routinely available
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; GaAs-AlGaAs; III-V semiconductor; national standards laboratories; ohm; p-n heterostructure; quantum Hall effect; resistance standards;
Conference_Titel :
Changes in the Value of the UK National Reference Standards for the Volt and the Ohm, IEE Colloquium on
Conference_Location :
London
