Title :
2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm
Author :
Brien, S. O´ ; Lang, R. ; Welch, D.F. ; Parke, R. ; Scifres, D.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
An GaAs-AlGaAs monolithically integrated master oscillator power amplifier (M-MOPA) operating in a single longitudinal mode at 854 nm has been fabricated which produces 2.2 W cw with a single-lobed, diffraction-limited far field pattern. Additionally, the extinction ratio in the far field with the oscillator turned off is 26 dB
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser modes; light diffraction; semiconductor lasers; 2.2 W; 854 nm; GaAs-AlGaAs; GaAs-AlGaAs monolithically integrated master oscillator power amplifier; M-MOPA; cw diffraction-limited monolithically integrated master oscillator power amplifier; extinction ratio; far field; semiconductor laser amplifiers; single longitudinal mode; single-lobed diffraction-limited far field pattern; Apertures; Diffraction; Distributed Bragg reflectors; Frequency; Gallium arsenide; Indium gallium arsenide; Optical amplifiers; Oscillators; Power amplifiers; Power generation;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519357
