Title :
The history and future of InP based electronics and optoelectronics
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Just as the III-V compounds and alloys have competed with Si for market share so InP has continually battled GaAs for the niches where this class of materials has the advantage. In this paper we will review some of the main developments that have occurred as InP has risen to its present status as the major optoelectronic provider in the 1.3 to 1.6 μm market, and as the electronic device material of choice for low noise, high efficiency, high power and radiation tolerant applications at very high frequencies
Keywords :
III-V semiconductors; indium compounds; optoelectronic devices; 1.3 to 1.6 μm; 1.3 to 1.6 mum; III-V compounds; InP; InP based electronics; high efficiency; high power; low noise; optoelectronics; radiation tolerant applications; very high frequencies; Consumer electronics; Frequency; Gallium arsenide; History; Indium phosphide; Instruments; MOSFET circuits; Optical devices; Optical materials; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712387
