Title :
295 mW CW maximum output of AlGaInP laser diode with windows grown on facets
Author :
Watanabe, Masanori ; Tani, Kentaro ; Sasaki, Kazuaki ; Nakatsu, Hiroshi ; Hosoda, Masahi Ro ; Matsui, Sadayoshi ; Yamamoto, Osamu ; Yamamoto, Saburo
Author_Institution :
Opto-Electron. Devices Div., Sharp Corp., Nara, Japan
Abstract :
Up to 295 mW kink-free CW maximum output, about twice as much as the conventional one, was achieved by implementing the WGF (windows grown on facets) structure to AlGaInP laser diode
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser accessories; laser modes; optical fabrication; optical windows; quantum well lasers; 295 mW; AlGaInP; AlGaInP laser diode; CW maximum output; facet grown laser windows; kink-free CW maximum output; laser modes; quantum well lasers; Buffer layers; Data storage systems; Degradation; Diode lasers; Laser applications; Laser modes; Molecular beam epitaxial growth; Optical films; Optoelectronic devices; Power lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519358
