DocumentCode
2814696
Title
Latest developments in VGF technology: GaAs, InP, and GaP
Author
Young, M. ; Liu, X. ; Zhang, D. ; Zhu, M. ; Hu, X.Y.
Author_Institution
American Xtal Technol., Fremont, CA, USA
fYear
1998
fDate
11-15 May 1998
Firstpage
30
Lastpage
33
Abstract
VGF (vertical gradient freeze) technology produces the world´s highest quality III-V semiconductors, including GaAs, InP, and GaP. In this paper, we review the latest developments of the VGF technology in terms of the crystal quality, electrical characteristics and mechanical strength, as well as epitaxy and implant applications
Keywords
III-V semiconductors; carrier mobility; crystal growth from melt; electrical resistivity; gallium arsenide; gallium compounds; grain boundaries; indium compounds; ion implantation; mechanical strength; semiconductor growth; GaAs; GaP; InP; crystal quality; epitaxy; ion implantation; mechanical strength; mobility; resistivity; vertical gradient freeze technology; Conductivity; Crystalline materials; Gallium arsenide; Grain boundaries; Indium phosphide; Manufacturing industries; Production; Semiconductor device manufacture; Semiconductor materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712393
Filename
712393
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