Title :
Review and prospects for VPE, MOVPE, MBE and CBE (MOMBE) of InP and related materials
Author :
Mirce, A. ; Alexandre, F. ; Decobert, J. ; Goldstein, L. ; Harmand, J.C. ; Ougazzaden, A.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
The market for InP-based epitaxies is still small and the different production methods coexist. Novel sources may renew the interest in Solid Source MBE. In MOVPE and CBE the tendency is towards lower temperatures and increased safety. Two novel families of materials are studied. The main challenges are cheap optoelectronic devices for the subscriber access network and very high speed microelectronics
Keywords :
III-V semiconductors; MOCVD; chemical beam epitaxial growth; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; CBE; InP; MBE; MOMBE; MOVPE; VCSEL; VPE; high speed microelectronics; optoelectronic devices; Epitaxial growth; Epitaxial layers; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Optoelectronic devices; Production; Safety; Solids; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712398
