Optical characterization of the energy gap of MOVPE-grown InAsBi

Author

Okamoto, Hiroshi ; Oe, Kunishige

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

60

Lastpage

63

Abstract

The InBi-content dependence of the energy gap (Eg) and its temperature dependence are evaluated for InAsBi-epitaxial layers by optical-transmission and low-temperature PL measurements. Eg decreases with increasing InBi content, and this relation is expressed by a linear equation. The temperature dependence of Eg decreases with increasing InBi-content. The ΔEg/ΔT of 0.22 meV/K obtained for InAs_0.963Bi_0.037 is smaller than that of InSb (0.29 meV/K), whose energy gap is smaller than that of InAs_0.963Bi_0.037

Keywords

III-V semiconductors; MOCVD coatings; energy gap; indium compounds; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; visible spectra; InAsBi; MOVPE-grown InAsBi; energy gap; linear equation; low-temperature photoluminescence; optical-transmission; temperature dependence; Absorption; Energy measurement; Epitaxial growth; Epitaxial layers; Infrared detectors; Lattices; Optical films; Photonic band gap; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712401

Filename

712401