Title :
High-power high-temperature operation of 0.98-μm S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers
Author :
Sagawa, M. ; Toyonaka, T. ; Hiramoto, K. ; Shinoda, K. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 0.98 mum; 1.61 eV; 345 meV; GaAs; GaAs barriers; InGaAsP; InGaAsP barriers; S-SQW lasers; bandgap difference; high power operation; high temperature; high-power high-temperature operation; temperature characteristics; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laboratories; Optical waveguides; Power generation; Power lasers; Quantum well lasers; Temperature; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519360
