DocumentCode :
2815173
Title :
Growth of low EPD and homogeneous 2" InP crystals using a newly developed thermal baffle
Author :
Hirano, R.
Author_Institution :
Dept. of Compound Semicond. Mater., Japan Energy Corp., Ibaraki, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
80
Lastpage :
83
Abstract :
We have developed low EPD and homogeneous 2" InP crystals using a newly developed thermal baffle. The average EPD of Sn doped InP can be reduced to less than 3000 cm-2. The minimum avenge EPD was about 200 cm-2. Visible facets can be observed and the crystal is somewhat rectangular. No lineage type defects were observed even in the last portion of the crystal. Dislocation free (DF) S doped InP crystals can be obtained with low S concentration using the newly developed baffle. The minimum S concentration was 1.7×1018 cm-3
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; sulphur; tin; InP:S; InP:Sn; S concentration; crystals; dislocation density; facets; high pressure LEC growth; thermal baffle; Crystalline materials; Crystals; Etching; Indium phosphide; Shape; Tail; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712406
Filename :
712406
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2815173
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