DocumentCode :
2815304
Title :
Direct and inverse energy trapping in the thin film resonators and optimization of their designs
Author :
Detaint, J. ; Capelle, B.
Author_Institution :
IMPMC, Univ. Paris VI, Paris
fYear :
2008
fDate :
19-21 May 2008
Firstpage :
19
Lastpage :
24
Abstract :
In this communication we consider the application of the Tiersten theory of the energy trapping of the "essentially" thickness modes to thin film resonators using the thickness extensional modes of ZnO and AlN textured films. Considering mainly the applications to filtering, we discuss the conditions allowing obtaining a single mode response, the influence of the shape of the electrodes and of the boundary conditions. It is observed that circular geometries are more favorable, that particular geometries allow to obtains resonators and monolithic filters with lower inductance values and that particular filter topologies allows much better performance than those presently most often used.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; circuit optimisation; crystal filters; crystal resonators; network synthesis; network topology; resonators; semiconductor thin films; thin film devices; zinc compounds; AlN; Tiersten theory; ZnO; boundary conditions; circular geometries; direct energy trapping; electrodes shape; filter design optimization; filter topologies; filtering applications; inductance values; inverse energy trapping; monolithic filters; piezoelectric devices; single mode response; textured films; thickness extensional modes; thin film resonators; Boundary conditions; Design optimization; Electrodes; Filtering; Geometry; Inductance; Resonator filters; Shape; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 2008 IEEE International
Conference_Location :
Honolulu, HI
ISSN :
1075-6787
Print_ISBN :
978-1-4244-1794-0
Electronic_ISBN :
1075-6787
Type :
conf
DOI :
10.1109/FREQ.2008.4622948
Filename :
4622948
Link To Document :
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