DocumentCode :
2815482
Title :
132 W monolithic two-dimensional surface emitting laser arrays
Author :
Nam, D.W. ; Sanders, S. ; Waarts, R.G. ; Welch, D.F.
Author_Institution :
SDL Inc., San Jose, CA, USA
fYear :
1994
fDate :
19-23 Sep 1994
Firstpage :
261
Lastpage :
262
Abstract :
We have demonstrated output powers of 3.4 W CW and 132 W Q-CW from a single element and a monolithic 4×12 element surface emitting InGaAs-AlGaAs QW lasers with ion milled 45° and 90° facets, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 132 W; 3.4 W; CW lasers; InGaAs-AlGaAs QW lasers; ion milled; monolithic two-dimensional surface emitting laser arrays; output powers; single element; surface emitting lasers; Laser feedback; Optical arrays; Optical materials; Power generation; Power lasers; Pump lasers; Quantum well lasers; Solid state circuits; Surface emitting lasers; Two dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
Type :
conf
DOI :
10.1109/ISLC.1994.519363
Filename :
519363
Link To Document :
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