Title :
Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP
Author :
Youwen, Zhao ; Fung, S. ; Beling, C.D. ; Xiaoliang, Xu ; Min, Gong ; Niefeng, Sun ; Tongnian, Sun ; Xudong, Chcn ; Ronggui, Zhang ; Silin, Liu
Author_Institution :
Dept. of Phys., Hong Kong Univ., Hong Kong
Abstract :
Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed
Keywords :
Hall effect; III-V semiconductors; annealing; defect absorption spectra; defect states; hydrogen; impurity absorption spectra; impurity states; impurity-vacancy interactions; indium compounds; infrared spectra; iron; photoconductivity; point defects; Fe-doped liquid encapsulated Czochralski InP; InP:Fe,H; annealed SI InP; annealed undoped liquid encapsulated Czochralski InP; compensation mechanism; defect formation; high temperature annealing; hydrogen indium vacancy complex; infrared absorption spectroscopy; mid gap donor defect; phosphorus antisite; photocurrent spectroscopy; room temperature Hall effect measurement; semi-insulating InP; shallow intrinsic defects; Annealing; Electromagnetic wave absorption; Hall effect; Hydrogen; Indium phosphide; Infrared spectra; Photoconductivity; Spectroscopy; Sun; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712409
