Title :
High speed dual modulus dividers using AlInAs-GaInAs HBT IC technology
Author :
Jensen, J.F. ; Stanchina, W.E. ; Metzger, R.A. ; Rensch, D.B. ; Allen, Y.K. ; Pierce, M.W. ; Kargodorian, T.V.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
4/5 and 8/9 dual-modulus prescalers are fabricated using AlInAs-GaInAs heterojunction bipolar transistors (HBTs) which operate at clock frequencies up to 9 GHz and which dissipate 700 mW and 900 mW, respectively. The transistor technology results in a cutoff frequency and maximum frequency of oscillation of 90 GHz and 70 GHz, respectively. The 4/5 and 8/9 dividers consists of 106 and 124 transistors, respectively. These are the largest circuits fabricated with HBTs on InP substrates and are among the fastest reported dual-modulus prescalers. The AlInAs-GaInAs HBT technology, circuit design, and measurement results are described.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; scaling circuits; substrates; 700 mW; 9 GHz; 90 GHz; 900 mW; AlInAs-GaInAs; HBT IC technology; InP substrates; circuit design; clock frequencies; cutoff frequency; dual-modulus prescalers; heterojunction bipolar transistors; maximum frequency of oscillation; measurement results; transistor technology; Clocks; Cutoff frequency; Doping; Flip-flops; Frequency synthesizers; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Phase locked loops; Photonic band gap;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175443
