Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen

Author

Grisyk, V.Y. ; Gaman, VI ; Baljuba, V.I. ; Davidova, T.A. ; Kalygina, V.M. ; Lobanov, I.S.

Author_Institution

Tomsk State Univ., Tomsk

fYear

2007

fDate

20-21 April 2007

Firstpage

198

Lastpage

201

Abstract

The main conditions of physical model of hydrogen influence on Pd-SiO₂-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (H_a) occurred due to dissociation of H₂ molecules on the surface of Pd electrode diffuse through Pd and SiO₂ layers and are adsorbed on Pd-SiO₂ and SiO₂-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.

Keywords

MOS capacitors; adsorption; diffusion; dissociation; electrodes; elemental semiconductors; gas sensors; hydrogen; palladium; semiconductor diodes; silicon; silicon compounds; MOS-capacitor; Pd electrode; Pd-SiO₂-Si - Interface; Si-based MOS-diode; adsorption; characteristic properties; diffusion; dissociation; gas sensor; hydrogen influence; physical model; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Communication system control; Electrodes; Gas detectors; Hydrogen; Semiconductor diodes; Silicon; Voltage; Flat-band voltage, Adsorption; Hydrogen; MOSdiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2007. SIBCON '07. Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

1-4244-0346-4

Type

conf

DOI

10.1109/SIBCON.2007.371324

Filename

4233303