Title :
Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen
Author :
Grisyk, V.Y. ; Gaman, VI ; Baljuba, V.I. ; Davidova, T.A. ; Kalygina, V.M. ; Lobanov, I.S.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
The main conditions of physical model of hydrogen influence on Pd-SiO2-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (Ha) occurred due to dissociation of H2 molecules on the surface of Pd electrode diffuse through Pd and SiO2 layers and are adsorbed on Pd-SiO2 and SiO2-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.
Keywords :
MOS capacitors; adsorption; diffusion; dissociation; electrodes; elemental semiconductors; gas sensors; hydrogen; palladium; semiconductor diodes; silicon; silicon compounds; MOS-capacitor; Pd electrode; Pd-SiO2-Si - Interface; Si-based MOS-diode; adsorption; characteristic properties; diffusion; dissociation; gas sensor; hydrogen influence; physical model; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Communication system control; Electrodes; Gas detectors; Hydrogen; Semiconductor diodes; Silicon; Voltage; Flat-band voltage, Adsorption; Hydrogen; MOSdiodes;
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
DOI :
10.1109/SIBCON.2007.371324
