AlGaAs/GaAs HBT receiver ICs for a 10 Gbps optical communication system

Author

Akagi, Junko ; Kuriyama, Yasuhiko ; Morizuka, Kouhei ; Asaka, Masayuki ; Tsuda, Kunio ; Obara, Masao ; Yamakawa, Hideaki ; Ibe, Hiroyuki

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

45

Lastpage

48

Abstract

Key component ICs for an optical communication system such as an equalizing amplifier a rectifier, and a limiting amplifier were fabricated with AlGaAs/GaAs HBTs. The equalizing amplifier with an amplitude detection circuit had an 11 GHz bandwidth, 30-dB maximum voltage gain and over 30-dB controllable gain width. The rectifier could extract 10-GHz signals, and the limiting amplifier had a 36-dB voltage gain at 10 GHz and an over 20-dB dynamic range with an under 10 degrees phase-shift deviation. These optical receiver ICs have a performance sufficient for 10-Gbit/s optical communication system.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; optical communication equipment; receivers; 10 GHz; 10 Gbit/s; 11 GHz; 30 to 36 dB; AlGaAs-GaAs; HBT receiver ICs; amplitude detection circuit; bandwidth; controllable gain width; dynamic range; equalizing amplifier; limiting amplifier; optical communication system; optical receiver ICs; phase-shift deviation; rectifier; semiconductors; voltage gain; Bandwidth; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical fiber communication; Optical receivers; Rectifiers; Semiconductor optical amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175444

Filename

175444