10-Gbit/s GaAs MESFET IC´s for ultra high-speed transmission systems

Author

Togashi, Minoru ; Ohhata, Masanobu ; Murata, Koichi ; Kindoh, Hideaki ; Ino, Masayuki ; Suzuki, Masao ; Yamane, Yasuro

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

49

Lastpage

52

Abstract

10-Gbit/s digital ICs for ultra high-speed transmission systems have been designed and developed. Self-aligned GaAs MESFETs with a gate length of 0.2 mu m are used in these ICs. A 4-bit multiplexer, a 4-bit demultiplexer, and a decision circuit successfully operate at 10 Gbit/s with a single power supply of -3.5 V. The fabrication process and the circuit performance are described.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; gallium arsenide; multiplexing equipment; optical communication equipment; -3.5 V; 0.2 micron; 10 Gbit/s; 4 bit; 4-bit demultiplexer; 4-bit multiplexer; GaAs; circuit performance; decision circuit; fabrication process; gate length; self-aligned MESFET; semiconductors; single power supply; ultra high-speed transmission systems; Assembly; Ceramics; Circuit synthesis; Coupling circuits; FETs; Gallium arsenide; High speed integrated circuits; Logic design; MESFET integrated circuits; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175445

Filename

175445