Title :
High speed 8:1 multiplexer and 1:8 demultiplexer implanted with AlGaAs/GaAs HBTs
Author :
Nubling, R.B. ; Yu, J. ; Wang, K.C. ; Asbeck, P.M. ; Sheng, N.H. ; Chang, M.F. ; Pierson, R.L. ; Sullivan, G.J. ; McDonald, M.A. ; Price, A.J. ; Chen, D.M.
Author_Institution :
Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
Development of an 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs heterojunction bipolar transistors is reported. The circuits were designed for lightwave communications and operate at data rates above 6 Gbit/s. The intrinsic speed of the circuits can be further increased by design changes with more power allocated per gate and better time matching at the high-speed ends. The circuit design, fabrication, and test results are presented.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; multiplexing equipment; optical communication equipment; 6 Gbit/s; 8:1 multiplexer; AlGaAs-GaAs; HBTs; circuit design; data rates; demultiplexer; fabrication; heterojunction bipolar transistors; lightwave communications; multiplexer; semiconductors; test results; Circuits; Clocks; Delay; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Latches; Multiplexing; Phase detection; SPICE;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175446
