DocumentCode
2815878
Title
Subnanosecond Optoelectronic Switch
Author
Prudaev, I.A. ; Skakunov, M.S. ; Tolbanov, O.P.
Author_Institution
Tomsk state Univ., Tomsk
fYear
2007
fDate
20-21 April 2007
Firstpage
228
Lastpage
230
Abstract
New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.
Keywords
III-V semiconductors; avalanche diodes; electro-optical switches; gallium arsenide; light emitting diodes; GaAs; avalanche GaAs S-diode; light-emitting diode; subnanosecond optoelectronic switch; Communication switching; Communication system control; Current-voltage characteristics; Gallium arsenide; Iron; Light emitting diodes; Production; Switches; Switching circuits; Voltage; Gallium arsenide; current-voltage characteristics; optoelectronic switch; watt-current characteristic;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
1-4244-0346-4
Type
conf
DOI
10.1109/SIBCON.2007.371332
Filename
4233311
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