Millimeter wave monolithic IC´s using direct ion implantation in to GaAs LEC substrates

Author

Lau, C.L. ; Feng, M. ; Hwang, T. ; Lepkowski, T. ; Ito, C. ; Dunn, V. ; Hodges, N.

Author_Institution

Ford Microelectronics Inc., Colorado Springs, CO, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

73

Lastpage

76

Abstract

Millimeter-wave monolithic ICs consisting of two-stage driver amplifiers and 4-bit phase shifters were fabricated by direct ion implantation into 3-inch diameter GaAs LEC (liquid encapsulated Czochralski) substrates. The monolithic two-stage amplifiers with 0.3-micron gate length, ion-implanted GaAs MESFETs achieve a gain of 9.0 to 10.1 dB from 40 to 48 GHz with a gain of 9.5 dB at 44 GHz. In the same frequency range, the input return loss varies from 9.8 to 11.5 dB and output return loss from 6.6 to 9.0 dB. The 4-bit phase shifters exhibit very accurate phase shift within 3 degrees for 0 to 247.5 states and 4-7 degrees for 270 to 337.5 states at 44 GHz. The insertion loss is 9.4 11.1 dB for all 16 states. The authors concentrate on the results of monolithic driver amplifiers and digital phase shifters at Q-band frequencies.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; ion implantation; microwave amplifiers; phase shifters; 0.3 micron; 3 in; 40 to 48 GHz; 6.6 to 11.5 dB; 9 to 9.5 dB; EHF; GaAs; LEC substrates; MESFETs; MIMIC; Q-band frequencies; digital phase shifters; direct ion implantation; frequency range; gain; gate length; input return loss; insertion loss; liquid encapsulated Czochralski; monolithic driver amplifiers; output return loss; semiconductors; two-stage driver amplifiers; Driver circuits; FETs; Frequency; Gain; Gallium arsenide; Ion implantation; MESFETs; Monolithic integrated circuits; Phase shifters; Submillimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175452

Filename

175452