0.5-23 GHz MMIC amplifier modules

Author

Ishitsuka, Fuminori ; Hosoya, Masakaze ; Tomimuro, Hisashi ; Takachio, Noboru ; Onodera, Kiyomitsu

Author_Institution

NTT Appl. Electron. Lab., Tokyo, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

109

Lastpage

112

Abstract

A wideband distributed GaAs MMIC (monolithic microwave IC) amplifier module developed for optical transmission systems is described. This module is assembled by an innovative packaging technique featuring a new multilayer ceramic-frame package with an improved impedance-matched film carrier. The newly designed package suppresses undesired modes arriving at grounded coplanar-waveguide terminals over a wide frequency bandwidth. For interconnection between the MMIC-chip electrode pads and the terminal pads of the package, a newly developed impedance-matched film carrier is used for module assembly having a wideband interconnection with a high mechanical strength and high reliability. The application of this packaging technique to GaAs distributed MMIC amplifier results in a 0.5 to 23 GHz, 5-dB flat gain that agrees well with the gain of an MMIC chip measured directly on-wafer.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; optical communication equipment; packaging; wideband amplifiers; 0.5 to 2.3 GHz; 5 dB; GaAs; MMIC amplifier modules; grounded coplanar-waveguide terminals; impedance-matched film carrier; mechanical strength; multilayer ceramic-frame package; optical transmission systems; packaging technique; reliability; wideband distributed amplifier; Assembly; Broadband amplifiers; Distributed amplifiers; Gallium arsenide; Impedance; MMICs; Microwave integrated circuits; Optical amplifiers; Optical films; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175462

Filename

175462