A low power, low phase noise 10 GHz MIC oscillator

Author

Dupouy, E. ; Nallatamby, J.C. ; Prigent, M. ; Laporte, C.

Author_Institution

Composants Circuits Signaux et Syst. Hautes Frequences, XLIM, Brive-la-Gaillarde

fYear

2008

fDate

19-21 May 2008

Firstpage

312

Lastpage

315

Abstract

This paper presents the design and the fabrication of a compact MIC 10 GHz single-transistor oscillator. It includes a packaged SiGe HBT (Infineon BFP740F) along with a low-Q coupled line resonator and only consumes 5 mA from a 3V power supply for an output power of -6 dBm. Its phase-noise has been measured at -117 dBc/Hz @100 kHz offset. Such performance is the result of a careful modeling process. The two most challenging aspects of the design were the stability analysis of the 10 GHz oscillator in hybrid technology and phase-noise optimization.

Keywords

MMIC oscillators; phase noise; HBT; MIC oscillator; current 5 mA; frequency 10 GHz; heterojunction bipolar transistors; hybrid circuits; hybrid technology; low-Q coupled line resonator; modeling process; phase-noise optimization; single-transistor oscillator; stability analysis; voltage 3 V; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave integrated circuits; Oscillators; Packaging; Phase noise; Power generation; Power supplies; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2008 IEEE International

Conference_Location

Honolulu, HI

ISSN

1075-6787

Print_ISBN

978-1-4244-1794-0

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2008.4623010

Filename

4623010