• DocumentCode
    2816451
  • Title

    FET-FET logic: a high performance, high noise margin E/D logic family

  • Author

    LaRue, G. ; Williams, T. ; Chan, P.

  • Author_Institution
    Boeing Aerospace & Electronics, Seattle, WA, USA
  • fYear
    1990
  • fDate
    7-10 Oct. 1990
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    A new logic family, FFL (FET-FET logic), is reported which combines a low leaded delay-power product with good noise margin. It has many desirable attributes for GaAs VLSI circuits. Measurements of FFL and six other logic families in enhancement/depletion MESFET technology are compared for speed, power, and noise margin and show the advantages of using FFL for many applications. FFL requires only a single 2-V power supply, performs single-ended complex logic functions, and can operate reliably over the military temperature range.<>
  • Keywords
    VLSI; field effect integrated circuits; integrated logic circuits; 2 V; E/D logic family; FET-FET logic; FFL; GaAs; VLSI circuits; enhancement/depletion MESFET technology; high noise margin; high performance; military temperature range; power; single 2-V power supply; single-ended complex logic functions; speed; Circuit noise; Delay; Gallium arsenide; Logic; MESFETs; Noise measurement; Power measurement; Power supplies; Velocity measurement; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/GAAS.1990.175492
  • Filename
    175492