X-band monolithic four-stage LNA with pulse-doped GaAs MESFETs

Author

Shiga, Nobuo ; Nakajima, Shigeru ; Otobe, Kenji ; Sekiguchi, Takeshi ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki

Author_Institution

Sumitomo Electric Ind. Ltd., Yokohama, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

237

Lastpage

240

Abstract

An X-band monolithic four-stage low-noise amplifier (LNA) with 0.5- mu m-gate pulse-doped GaAs MESFETs has been demonstrated. At 12 GHZ this LNA has a noise figure of 1.67 dB, with 18.5-dB gain, an input VSWR of less than 1.6:1, and an output VSWR of less than 1.8:1. Noise figure, gain, and VSWRs show very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, high yield is obtained, making this device suitable for mass production.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; 0.5 micron; 1.67 dB; 12 GHz; 18.5 dB; GaAs; MMIC; SHF; X-band; bias current insensitivity; low-noise amplifier; mass production; monolithic four-stage LNA; optimized circuit design; performance stability; pulse doped MESFET; Circuit synthesis; Design optimization; FETs; Gain; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Pulse amplifiers; Pulse circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175496

Filename

175496