A GaAs vertical PIN diode production process

Author

Zych, D. ; Beall, J. ; Seymour, D. ; Delaney, J. ; Mercer, B. ; Stidham, J. ; Wdowik, M.

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

241

Lastpage

244

Abstract

A GaAs vertical PIN diodes production process which integrates TaN resistors, MIM capacitors, plated airbridges, transmission lines, and via interconnects on the same MMIC chip is developed. A variety of circuit types, with high probe yields and excellent RF performance, have been fabricated. By eliminating the need for hybrid PIN diodes, this process makes significant advances in reducing the cost and complexity of radar assemblies. The monolithic microwave IC (MMIC) process flow, DC probe yields, and diode performance are reported.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; integrated circuit manufacture; p-i-n diodes; DC probe yields; GaAs; MIM capacitors; MMIC process flow; TaN resistors; diode performance; monolithic microwave IC; plated airbridges; production process; transmission lines; vertical PIN diode; via interconnects; Costs; Distributed parameter circuits; Gallium arsenide; Integrated circuit interconnections; MIM capacitors; MMICs; Probes; Production; Radio frequency; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175497

Filename

175497