A Rh/Au/Rh rigid air-bridge interconnection technique for ultra-high speed GaAs LSIs

Author

Inoue, T. ; Tomita, K. ; Kitaura, Y. ; Terada, T. ; Uchitomi, N.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

253

Lastpage

256

Abstract

A rhodium/gold/rhodium (Rh/Au/Rh) air-bridge interconnection has been developed for applying to ultra-high-speed GaAs LSIs. This structure is suitable for forming a mechanically strong air-bridge interconnection, which enables an interconnection length to be expanded without many support-pillars, compared with a gold air-bridge interconnection. This contribution of the air-bridge interconnection to total propagation delay time in a GaAs LSI chip is quantitively investigated. It is found that applying the air-bridge interconnection to a GaAs LSI with 10 K-gate complexity causes total delay time to be reduced to 65%, compared with the conventional interconnection.<>

Keywords

digital integrated circuits; gallium arsenide; gold; integrated circuit technology; large scale integration; metallisation; rhodium; GaAs; Rh-Au-Rh; rigid air-bridge interconnection; total propagation delay time; ultra-high speed GaAs LSIs; ultrahigh speed LSI chip; Bridge circuits; Circuit simulation; Delay effects; Gallium arsenide; Gold; Integrated circuit interconnections; Large scale integration; Parasitic capacitance; Propagation delay; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175500

Filename

175500