Title :
The 200 MHz- and 1.5 GHz-band GaAs monolithic quadrature modulator ICs
Author :
Maemura, K. ; Kohno, Y. ; Nakano, H. ; Shimura, T. ; Oki, K. ; Ishida, H. ; Ishihara, O.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
The 200-MHz and 1.5-GHz-band quadrature modulator ICs are developed. The ICs integrate a digital frequency divider, double-balanced FET mixers, and a combiner. The power consumptions of the 200-MHz- and 1.5-GHz-band modulator ICs are 100 mW and 160 mW, respectively. These ICs realize low distortion below -50 dBc, and low image and carrier rejections below -40 dBc and they reduce the phase-error to less than 1.1 degrees . The modulator ICs have excellent spectrum efficiency and are useful in realization of small-size and lightweight handy radio telephone equipment. Circuit design, fabrication process, and device performance are outlined.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; modulators; 1.5 GHz; 100 mW; 160 mW; 200 MHz; GaAs; LDD SAG FET process; combiner; device performance; digital frequency divider; double-balanced FET mixers; fabrication process; monolithic IC; quadrature modulator ICs; Digital communication; Driver circuits; Energy consumption; FETs; Frequency conversion; Gallium arsenide; Microwave devices; Phase distortion; Phase modulation; Signal generators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175508
