Title :
A 6- to 18-GHz two-stage distributed low noise amplifier designed for high yield
Author :
Culver, J. ; Bacon, P. ; Hoff, G.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
A high-performance 6- to 18-GHz MMIC (monolithic microwave IC) low -noise distributed amplifier is described. It was designed and fabricated to demonstrate readiness of both foundries for high-volume MMIC production. The LNA (low-noise amplifier) exhibits a nominal gain of 12.5 dB and a noise figure of 5.5 dB, average for both foundries. Measurements on 52 wafers show an overall yield of 54.1% with fabrication cost of about $3 per square millimeter. Yield is defined as the total number of devices that meet the RF requirements in relation to the total number of devices started. Sensitivity of the design to process variations and features of the design that minimize sensitivity are discussed.<>
Keywords :
MMIC; microwave amplifiers; 12.5 dB; 5.5 dB; 6 to 18 GHz; LNA; MMIC; RF requirements; fabrication cost; process variations; sensitivity; two-stage distributed low noise amplifier; yield; Distributed amplifiers; Foundries; Gain; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Production;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175514
