Stepper technology in 0.5 mu m GaAs monolithic microwave integrated circuits (MMIC) applications

Author

Fink, S.L. ; Chi, T.Y. ; Wang, D.C.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

309

Lastpage

312

Abstract

I-line stepper technology is successfully developed and implemented into Hughes high-volume production in fabricating 0.5- mu m GaAs monolithic microwave integrated circuits (MMICs). A single-layer photoresist process is developed and achieves tight gate-length control, within 10% variation. The rework rate of the gate layer is less than 20%. By combining optimal circuit designs with advanced GaAs wafer processing techniques, several MMIC amplifiers are made with 50% DC-circuit yield and good RF performance. Mix-and-match of wafer stepper and contact aligner is also developed and routinely used. This technology significantly improves the stepper utilization and throughput in a production environment.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; photolithography; 0.5 micron; DC-circuit yield; GaAs; Hughes high-volume production; I-line stepper technology; MMIC; MMIC amplifiers; RF performance; contact aligner; gate-length control; monolithic microwave integrated circuits; optimal circuit designs; production environment; rework rate; single-layer photoresist process; stepper utilization; throughput; wafer processing techniques; wafer stepper; Circuit synthesis; Gallium arsenide; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Production; Radiofrequency amplifiers; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175516

Filename

175516