Title :
Energy-efficient redox-based non-volatile memory devices and logic circuits
Author :
Waser, Rainer ; Rana, Vijay ; Menzel, Stephan ; Linn, Eike
Author_Institution :
PGI-7 & JARA-FIT, Forschungszentrum Julich, Julich, Germany
Abstract :
Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.
Keywords :
DRAM chips; MRAM devices; energy conservation; flash memories; logic circuits; memristors; oxidation; reduction (chemical); DRAM; ReRAM; energy-efficient redox; flash memory; logic circuit; memristive element; nanoionic memory; neuromorphic concept; nonvolatile memory device; redox-based resistive switching memory; Electronic countermeasures; Energy efficiency; Ions; Kinetic theory; Nanoscale devices; Nonvolatile memory; Switches;
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
DOI :
10.1109/E3S.2013.6705863
