DocumentCode
2816870
Title
CAD for GaAs MMIC manufacturability
Author
Ladbrooke, P.H. ; Hill, A.J. ; Bridge, J.P.
Author_Institution
GaAs Code Ltd., Cambridge, UK
fYear
1990
fDate
7-10 Oct. 1990
Firstpage
335
Lastpage
338
Abstract
Beginning in 1974, a program of structured experimental and theoretical research has led to a compact, physics-based description of the GaAs FET which forms the nucleus of a collection of CAD tools for MMIC (monolithic microwave IC) design. The objective of physics-based CAD is to allow circuit designers and foundry operators to account properly for the likely effects of process variations in advance of MMIC fabrication, and to offer a diagnostic capability to help detect the origin of failures when chips are out-of-specification.<>
Keywords
CAD/CAM; III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; gallium arsenide; CAD tools; FET; GaAs; MMIC manufacturability; circuit designers; diagnostic capability; failures; foundry operators; process variations; Computer aided manufacturing; Design automation; FET integrated circuits; Foundries; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/GAAS.1990.175523
Filename
175523
Link To Document