Title :
CAD for GaAs MMIC manufacturability
Author :
Ladbrooke, P.H. ; Hill, A.J. ; Bridge, J.P.
Author_Institution :
GaAs Code Ltd., Cambridge, UK
Abstract :
Beginning in 1974, a program of structured experimental and theoretical research has led to a compact, physics-based description of the GaAs FET which forms the nucleus of a collection of CAD tools for MMIC (monolithic microwave IC) design. The objective of physics-based CAD is to allow circuit designers and foundry operators to account properly for the likely effects of process variations in advance of MMIC fabrication, and to offer a diagnostic capability to help detect the origin of failures when chips are out-of-specification.<>
Keywords :
CAD/CAM; III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; gallium arsenide; CAD tools; FET; GaAs; MMIC manufacturability; circuit designers; diagnostic capability; failures; foundry operators; process variations; Computer aided manufacturing; Design automation; FET integrated circuits; Foundries; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175523
