DocumentCode
2816953
Title
A monolithic X-band 3 W power amplifier with 4.5 GHz bandwidth
Author
LeSage, S.R. ; Mendes, M.J. ; Sullivan, F.J.
Author_Institution
Raytheon Co., Tewksbury, MA, USA
fYear
1990
fDate
7-10 Oct. 1990
Firstpage
353
Lastpage
356
Abstract
The design and performance of an X-band amplifier with greater than 3-W CW output power over a 4.5-GHz bandwidth is described. This fully-monolithic amplifier achieved an average power-added efficiency of 18% over the band with 8- to 13-dB gain (2-dB compressed). The two-stage amplifier is fabricated with conventional ion-implanted MESFETs and offers an attractive combination of output power, efficiency, bandwidth and size. This intermediate-bandwidth amplifier is the first of its type to provide greater than 3-W CW output power over the entire X-band.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 3 W; 4.5 GHz; 8 to 13 dB; CW output power; MMIC; X-band; efficiency; intermediate-bandwidth amplifier; ion-implanted MESFETs; power amplifier; power-added efficiency; Bandwidth; Broadband amplifiers; Circuit topology; Gain; MESFETs; MMICs; Phased arrays; Power amplifiers; Power generation; Pulse amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/GAAS.1990.175527
Filename
175527
Link To Document