Title :
An X-band high-efficiency ion-implanted MMIC power amplifier
Author :
Le, H. ; Shih, Y.C. ; Chi, T. ; Kasel, K. ; Wang, D.C.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
An X-band high-efficiency monolithic power amplifier has been designed. Across the 40% bandwidth from 8 GHz to 12 GHz, the amplifier produces 1.6 W to 2.1 W of output power at 33% to 40% power-added efficiency. For high-power operation, the amplifier can produce 2.4 W to 2.8 W of output power at 26% to 29% power-added efficiency across the 40% bandwidth from 8 GHz to 12 GHz. A balanced approach using Lange couplers results in excellent input and output return losses of better than 15 dB. The devices are fabricated using the Hughes baseline ion-implanted process for MMIC (monolithic microwave IC) power amplifiers. This planar ion-implanted 0.5- mu m MESFET technology is selected for this high-power and high-efficiency application. For this stepper technology, a total of 11 mask layers is used to complete the entire MMIC wafer process. The design, fabrication, and performance of the amplifier are presented.<>
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; ion implantation; microwave amplifiers; power amplifiers; 0.5 micron; 1.6 to 2.1 W; 2.4 to 2.8 W; 26 to 29 percent; 33 to 40 percent; 8 to 12 GHz; Hughes baseline ion-implanted process; Lange couplers; MESFET technology; MMIC; X-band; high-power operation; ion-implanted MMIC power amplifier; mask layers; output power; power-added efficiency; return losses; stepper technology; Bandwidth; Couplers; High power amplifiers; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Operational amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175529
