DocumentCode
2817003
Title
A 1.6 Watt high efficiency 7-11 GHz power MMIC
Author
Avasarala, M. ; Day, D.S. ; Chan, S. ; Hua, C. ; Basset, J.R.
Author_Institution
Avantek Inc., Santa Clara, CA, USA
fYear
1990
fDate
7-10 Oct. 1990
Firstpage
365
Lastpage
368
Abstract
A two-stage MBE (molecular beam epitaxy) monolithic power amplifier is reported with excellent performance in power and power-added-efficiency (PAE) over the entire frequency band of 7-11 GHz. The monolithic chip contains full interstage matching and partial input matching. When matched to 50 ohms at both input and output using simple off-chip circuitry, the MMIC demonstrates best overall performance of 32 dBm (0.44 W/mm), 33%, and 13.7 dB of power, PAE, and associated gain at a gain compression of 2 dB. These values are the minimum across the entire 40% bandwidth. The average performance from 11 devices from 3 wafers is a power of 31 dBm, PAE of 30%, and 2-dB compressed gain of at least 10.5 dB across the band. Conservative design coupled with a partial monolithic implementation resulted in a relatively small die size of 0.083"*0.046".<>
Keywords
MMIC; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; 1.6 W; 33 percent; 7 to 11 GHz; MBE; die size; gain compression; interstage matching; monolithic power amplifier; partial input matching; power MMIC; power-added-efficiency; Bandwidth; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; MMICs; Performance gain; Phased arrays; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/GAAS.1990.175530
Filename
175530
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