• DocumentCode
    2817003
  • Title

    A 1.6 Watt high efficiency 7-11 GHz power MMIC

  • Author

    Avasarala, M. ; Day, D.S. ; Chan, S. ; Hua, C. ; Basset, J.R.

  • Author_Institution
    Avantek Inc., Santa Clara, CA, USA
  • fYear
    1990
  • fDate
    7-10 Oct. 1990
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    A two-stage MBE (molecular beam epitaxy) monolithic power amplifier is reported with excellent performance in power and power-added-efficiency (PAE) over the entire frequency band of 7-11 GHz. The monolithic chip contains full interstage matching and partial input matching. When matched to 50 ohms at both input and output using simple off-chip circuitry, the MMIC demonstrates best overall performance of 32 dBm (0.44 W/mm), 33%, and 13.7 dB of power, PAE, and associated gain at a gain compression of 2 dB. These values are the minimum across the entire 40% bandwidth. The average performance from 11 devices from 3 wafers is a power of 31 dBm, PAE of 30%, and 2-dB compressed gain of at least 10.5 dB across the band. Conservative design coupled with a partial monolithic implementation resulted in a relatively small die size of 0.083"*0.046".<>
  • Keywords
    MMIC; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; 1.6 W; 33 percent; 7 to 11 GHz; MBE; die size; gain compression; interstage matching; monolithic power amplifier; partial input matching; power MMIC; power-added-efficiency; Bandwidth; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; MMICs; Performance gain; Phased arrays; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/GAAS.1990.175530
  • Filename
    175530