DocumentCode :
2817224
Title :
Nanoelectromechanical switching devices: Scaling toward ultimate energy efficiency and longevity
Author :
Feng, Philip X.-L
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
fYear :
2013
fDate :
28-29 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
The active search for candidates of an ideal switching device for low-voltage logic and ultralow-power applications has stimulated focused explorations of contact-mode switches (relays) based on micro/nanoelectromechanical systems (MEMS/NEMS) [1-7]. This has been driven by the fundamental advantages that mechanical devices offer, such as ideally abrupt switching with zero off-state leakage, suitable for harsh and extreme environments, and very small footprints (e.g., particularly with NEMS). In pursuing and realizing these advantages, however, significant challenges still remain today: (i) All the high-performance mechanical switches recently demonstrated are still in the MEMS domain [2-5] and are orders of magnitude larger in size or volume (>103 to 104) than the nanoscale devices presented in this work. (ii) Most truly nanoscale contact-mode NEMS switches known to date (often based on various nanowires, cantilevers and nanotubes) still suffer from very short lifetimes.nanoscale contact-mode NEMS switches
Keywords :
nanoelectromechanical devices; switches; contact-mode switches; energy efficiency; longevity; low-voltage logic applications; nanoelectromechanical switching devices; ultralow-power applications; Logic gates; Nanoelectromechanical systems; Nanoscale devices; Silicon carbide; Switches; Switching circuits; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
Type :
conf
DOI :
10.1109/E3S.2013.6705881
Filename :
6705881
Link To Document :
بازگشت