Title :
Suppression of carrier accumulation at the epilayer/substrate interface of InSb grown on GaAs and InP
Author :
Tanaka, T. ; Washima, M. ; Sakaguchi, H.
Author_Institution :
Adv. Res. Center, Hitachi Cable Ltd., Ibaraki, Japan
Abstract :
Carrier accumulation at the heterointerface of InSb/substrate was investigated. Various surface indexes of the zinc-blende structure lattice were used as substrate for InSb growth and carrier concentration dependence on these indexes was recognized. This concentration increased in proportion to the dangling bond density, and the suppression of this accumulation was successfully performed by using a (111) interface, which had the lowest dangling bond density among all the surface indexes
Keywords :
Hall effect; III-V semiconductors; carrier density; dangling bonds; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; GaAs; InP; InSb-GaAs; InSb-InP; carrier accumulation; carrier concentration; dangling bond density; epilayer/substrate interface; heterointerface; zinc-blende structure; Buffer layers; Charge carrier density; Gallium arsenide; Impurities; Indium phosphide; Lattices; Magnetic sensors; Pollution measurement; Substrates; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712417
