Title :
Simulation of Quantum Transport in Small Semiconductor Devices
Author :
Fischetti, M.V. ; Laux, S.E. ; Kumar, A.
Author_Institution :
Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA and A simriilar version of this work - performed at the IBM T. J. Watson Research Center, Yorktown Heights, New York - was presented at the I
Abstract :
We describe a formulation of quantum electron transport in small devices based on the Master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We compare this approach to alternative formulations of quantum transport and present results regarding ballistic and dissipative transport in double gate Si FETs.
Keywords :
Computational modeling; Double-gate FETs; Electrons; Electrostatics; Equations; Nanoscale devices; Particle scattering; Potential well; Research and development; Semiconductor devices;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201462
