DocumentCode
2817394
Title
Single Event Upset Characterization of the Virtex-5 Field Programmable Gate Array Using Proton Irradiation
Author
Hiemstra, David M. ; Battiston, George ; Gill, Prab
Author_Institution
MDA, Brampton, ON, Canada
fYear
2010
fDate
20-23 July 2010
Firstpage
4
Lastpage
4
Abstract
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-5 FPGA are presented. Upset rates in the space radiation environment are estimated.
Keywords
SRAM chips; field programmable gate arrays; SRAM; Virtex-5 field programmable gate array; logic configuration; proton irradiation; single event upset characterization; space radiation environment; Field programmable gate arrays; Light emitting diodes; Performance evaluation; Protons; Radiation effects; Random access memory; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location
Denver, CO
ISSN
2154-0519
Print_ISBN
978-1-4244-8405-8
Type
conf
DOI
10.1109/REDW.2010.5619490
Filename
5619490
Link To Document