DocumentCode :
2817394
Title :
Single Event Upset Characterization of the Virtex-5 Field Programmable Gate Array Using Proton Irradiation
Author :
Hiemstra, David M. ; Battiston, George ; Gill, Prab
Author_Institution :
MDA, Brampton, ON, Canada
fYear :
2010
fDate :
20-23 July 2010
Firstpage :
4
Lastpage :
4
Abstract :
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-5 FPGA are presented. Upset rates in the space radiation environment are estimated.
Keywords :
SRAM chips; field programmable gate arrays; SRAM; Virtex-5 field programmable gate array; logic configuration; proton irradiation; single event upset characterization; space radiation environment; Field programmable gate arrays; Light emitting diodes; Performance evaluation; Protons; Radiation effects; Random access memory; Single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
ISSN :
2154-0519
Print_ISBN :
978-1-4244-8405-8
Type :
conf
DOI :
10.1109/REDW.2010.5619490
Filename :
5619490
Link To Document :
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