Title :
Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions
Author :
Koga, R. ; Yu, P. ; George, J. ; Bielat, S.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.
Keywords :
DRAM chips; ions; protons; DDR2 SDRAM; control circuit sections; heavy ions; memory elements; protons ions; single event effects sensitivity; synchronous dynamic random access memories; Energy states; Ions; Protons; Radiation effects; SDRAM; Sensitivity; Uncertainty;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619491
