Title :
Effect of Discrete Dopant Distribution on MOSFETs Scaling into the Future
Author :
Ashizawa, Yoshio ; Oka, Hideki
Author_Institution :
Fujitsu Laboratories Ltd. 50 Fuchigami, Akiruno, Tokyo, 197-0833, Japan. E-mail: ashizawa.yoshio@jp.fujitsu.com
Abstract :
Device characteristics fluctuation due to discrete dopant distribution is one of the serious problems for future device scaling. We have evaluated the potential field on the substrate by applying 2D FFT. It is found that specific wave length range, 20 nm to 25 nm, is dominant to device characteristics. Moreover, if device size scales less than this specific wave length, there will be size effect caused by local potential fluctuation.
Keywords :
Analytical models; Boron; Doping; Fluctuations; Impurities; Kinetic theory; Laboratories; MOSFETs; Response surface methodology; Simulated annealing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201465
