Title :
Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine
Author :
Pan, Z. ; Miyamoto, T. ; Schlenker, D. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A highly strained GaInNAs/GaAs quantum well (~+2%) was investigated by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy). The V/III ratio was found to be an important parameter, especially for GaInNAs growth using TBAs based on MOCVD, which strongly affected both the photoluminescence intensity and alloy compositions. Further, we proposed a post-growth annealing procedure to improve the quality of GaInNAs quantum wells. The photoluminescence intensity was improved by a factor of 10 after annealing at 640°C
Keywords :
III-V semiconductors; MOCVD; annealing; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; InP; MOCVD; V/III ratio; alloy composition; dimethylhydrazine; photoluminescence intensity; post-growth annealing; quantum wells; tertiarybutylarsine; Annealing; Fiber lasers; Gallium arsenide; Indium; MOCVD; Nitrogen; Photoluminescence; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712420
