DGSOI versus Bulk: A Quantum-Ballistic Study of 25 nm nMOSFETs

Author

Schenk, Andreas ; Heinz, Frederik Ole ; Schmithusen, B.

Author_Institution

Integrated Systems Laboratory, Swiss Fed. Inst. of Technology, Gloriastr. 35, CH-8092 Zürich, Switzerland and Synopsys Switzerland LLC, Affolternstrasse 52, CH-8050 Zürich, Switzerland. e-mail: schenk@iis.ee.ethz.ch, Tel: +41 1 263 6689, Fax +41

fYear

2005

fDate

01-03 Sept. 2005

Firstpage

47

Lastpage

50

Abstract

In this paper we study the performance of bulk and DGSOI nMOSFETs with 25 nm gate length in the quantum-coherent limit. The self-consistent wave functions are computed using a multi-sub-band scattering matrix formalism which allows to retain their full dimensionality and therefore eliminates the need for the adiabatic decomposition of the Schrödinger equation. We find that source-drain tunneling is negligibly small in both devices. Since the current is almost exclusively thermionic, the observed increase of the off-current with increasing drain bias can be attributed to drain-induced barrier lowering. The quantum-ballistic currents are by a factor of 2-3 larger than the quantum-drift-diffusion currents. The quantum-ballistic sub-threshold slope is almost the same for bulk and DGSOI MOSFET.

Keywords

Doping profiles; Electrons; Laboratories; MOSFET circuits; Particle scattering; Predictive models; Semiconductor device modeling; Silicon; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on

Print_ISBN

4-9902762-0-5

Type

conf

DOI

10.1109/SISPAD.2005.201469

Filename

1562021