• DocumentCode
    2817509
  • Title

    Commercially Designed and Manufactured SDRAM SEE Data

  • Author

    Hafer, Craig ; Von Thun, Matthew ; Leslie, Mike ; Sievert, Fred ; Jordan, Anthony

  • Author_Institution
    Aeroflex Colorado Springs, Colorado Springs, CO, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    5
  • Lastpage
    5
  • Abstract
    A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration. The Single Event Effects (SEE) performance is reported.
  • Keywords
    DRAM chips; multichip modules; MCM configuration; SDRAM SEE data; TID tolerant; single event effects; single event latchup immune; storage capacity 2.5 Gbit; storage capacity 3 Gbit; storage capacity 512 Mbit; Arrays; Ion beams; Ions; Radiation effects; SDRAM; Springs; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619497
  • Filename
    5619497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817509