• DocumentCode
    2817548
  • Title

    Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

  • Author

    Heidecker, Jason ; Allen, Gregory ; Sheldon, Douglas

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    4
  • Lastpage
    4
  • Abstract
    A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).
  • Keywords
    MRAM devices; MRAM; magnetoresistive random access memory; single event latchup; total ionizing dose; HDTV; Laboratories; Magnetic tunneling; Performance evaluation; Propulsion; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619499
  • Filename
    5619499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817548