DocumentCode
2817556
Title
Effect of Mo layer on performance of AlN/Si SAW filter
Author
Trang Hoang ; Rey, Patrice ; Vaudaine, M.-H. ; Robert, Philippe ; Benech, Ph
Author_Institution
Heterogeneous Silicon Integration Dept., CEA/LETI, Grenoble
fYear
2008
fDate
19-21 May 2008
Firstpage
615
Lastpage
618
Abstract
This paper presents the effect of Mo thin layer on performance of AIN/Si SAW filter. This purpose is done by comparison between AIN/Mo/Si and AIN/Si SAW devices. The texture of AlN film is strongly influenced by the texture and roughness of the Si substrate and by the bottom Mo electrodes. The texture of AlN is evaluated by the full-width at half-maximum (FWHM) of x-ray rocking curves (XRD). The FWHM of AlN films are measured in different thicknesses of AlN films, with and without bottom Mo layer. Network analyzer HP 8753E is used for analysis of SAW filters performance. The influences of Mo layer on performance of SAW filter are analysed by model, simulation of SAW filter, by characterization of fabricated different devices. Using Mo layer below AlN would have subjects of interest which include increasing the gain of filter, saving die area that is the important and interesting application.
Keywords
III-V semiconductors; aluminium compounds; elemental semiconductors; molybdenum; network analysers; silicon; surface acoustic wave filters; thin film devices; wide band gap semiconductors; AlN-Mo-Si; FWHM; SAW devices; SAW filter; X-ray rocking curves; die area; film texture; full-width half-maximum; molybdenum thin layer; network analyzer HP 8753E; silicon substrate roughness; Electrodes; Fingers; Frequency; Performance analysis; SAW filters; Substrates; Surface acoustic wave devices; Surface acoustic waves; Surface morphology; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 2008 IEEE International
Conference_Location
Honolulu, HI
ISSN
1075-6787
Print_ISBN
978-1-4244-1794-0
Electronic_ISBN
1075-6787
Type
conf
DOI
10.1109/FREQ.2008.4623073
Filename
4623073
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