Title :
An Accurate Separation of Floating-Body and Self-Heating Effects for High-Frequency Characterization of SOI MOSFET´s
Author :
Miura, Noriyuki ; Chiba, Tadashi ; Baba, Shunsuke
Author_Institution :
Semiconductor R&D Division, Oki Electric Industry Co., Ltd. 550-1 Higashi-asakawa, Hachioji, Tokyo, 193-8550, Japan. Email: miura288@oki.com
Abstract :
In this paper, we present an accurate high-frequency characterization of AC output conductance method to separate SOI specific floating-body effects (FBE) and self-heating effects (SHE) from DC I-V data. In DC measurement, the transistor TEG pattern dependence is essential in view of the SOI body potential, which is confirmed by 3-dimensional device simulation. In AC measurement, the power of small-signal is the most critical issue for removing the FBE and SHE components.
Keywords :
Electrical resistance measurement; Electrodes; Frequency measurement; Immune system; MOSFET circuits; Parasitic capacitance; Power measurement; Radio frequency; Research and development; Silicon on insulator technology;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201473
