Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices

Author

Fudeta, M. ; Asahi, H. ; Kim, S.J. ; Noh, J.H. ; Asami, K. ; Gonda, S.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

159

Lastpage

162

Abstract

Quantum dots (QDs) structures are self-formed by the growth of (GaP)_n(InP)_m short-period superlattices (SLs) sandwiched with InGaP barrier layers on GaAs(N11)A (N=2-5) substrates. Their lateral density is as high as 10¹¹-10¹² cm ^-2. Optical properties of multilayer quantum dots (MQDs)/InGaP multilayer structures are investigated by changing SL period (P) and InGaP barrier thickness (B). By decreasing P and B, PL peak broadening with temperature is much reduced. The multilayer quantum dots light emitting diode (MQDs-LED) shows excellent electroluminescence (EL) properties

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor superlattices; GaP-InP; GaP/InP short period superlattices; electroluminescence; lateral density; multilayer quantum dots light emitting diode; optical properties; photoluminescence; strain-induced quantum dots; Indium phosphide; Laser sintering; Light emitting diodes; Molecular beam epitaxial growth; Nonhomogeneous media; Optical superlattices; Quantum dot lasers; Quantum dots; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712426

Filename

712426